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| Bulletin I25152 rev. E 09/03 110/111RKI SERIES PHASE CONTROL THYRISTORS Stud Version Features High current and high surge ratings Hermetic ceramic housing 110A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz It 2 110/111RKI 110 90 172 2080 2180 21.7 19.8 400 to 1200 Units A C A A A KA2s KA2s V s C @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical 110 - 40 to 140 case style TO-209AC (TO-94) www.irf.com 1 110/111RKI Series Bulletin I25152 rev. E 09/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 40 110/111RKI 80 120 V DRM/V RRM, max. repetitive peak and off-state voltage V 400 800 1200 repetitive peak voltage V 500 900 1300 VRSM , maximum non- I DRM /I RRM max. @ TJ = TJ max. mA 20 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current 110/111RKI 110 90 172 2080 2180 1750 1830 Units Conditions A C DC @ 83C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2 s t = 8.3ms t = 10ms t = 8.3ms KA2 s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. 180 conduction, half sine wave I2 t Maximum I2t for fusing 21.7 19.8 15.3 14.0 I 2 t Maximum I2t for fusing 217 0.82 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current V 1.02 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 1.70 1.57 200 400 V mA (I > x IT(AV)),TJ = TJ max. Ipk= 350A, TJ = TJ max., tp = 10ms sine pulse T J = 25C, anode supply 6V resistive load 2.16 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Typical turn-off time 110/111RKI 300 1 Units Conditions A/s Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM Vd = 0.67% VDRM, TJ = 25C Gate current 1A, di g /dt = 1A/s s 110 ITM = 50A, TJ = TJ max., di/dt = -5A/s, VR = 50V dv/dt = 20V/s, Gate 0V 25 2 www.irf.com 110/111RKI Series Bulletin I25152 rev. E 09/03 Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current 110/111RKI 500 20 Units Conditions V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM /V RRM applied Triggering Parameter PGM IGM +VGM -VGM Maximum peak gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. IGT DC gate current required to trigger 180 80 40 VGT DC gate voltage required to trigger 2.5 1.6 1 IGD VGD DC gate current not to trigger DC gate voltage not to trigger 6.0 0.25 PG(AV) Maximum average gate power 110/111RKI 12 3.0 3.0 20 Units Conditions W A TJ = TJ max, t p 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p 5ms V 10 MAX. 120 2 mA V V mA TJ = TJ max, tp 5ms TJ = - 40C TJ = 25C TJ = 140C TJ = - 40C TJ = 25C TJ = 140C TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied Thermal and Mechanical Specification Parameter TJ Tstg RthJC RthCS T Max. operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10% 110/111RKI -40 to 140 -40 to 150 0.27 Units Conditions C DC operation K/W Mounting surface, smooth, flat and greased Non lubricated threads Nm (lbf-in) Lubricated threads 0.1 15.5 (137) 14 (120) wt Approximate weight Case style 130 g See Outline Table TO - 209AC (TO-94) www.irf.com 3 110/111RKI Series Bulletin I25152 rev. E 09/03 (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) RthJC Conduction Conduction angle 180 120 90 60 30 Sinusoidal conduction Rectangular conduction Units 0.043 0.052 0.066 0.096 0.167 0.031 0.053 0.071 0.101 0.169 K/W Conditions T J = T J max. Ordering Information Table Device Code 11 1 1 2 RKI 120 3 4 1 2 3 4 - IT(AV) rated average output current (rounded/10) 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) Thyristor Voltage code: Code x 10 = VRRM (See Voltage Rating Table) 4 www.irf.com 110/111RKI Series Bulletin I25152 rev. E 09/03 Outline Table CERAMIC HOUSING 16.5 (0.65) MAX. 9. 5 FLEXIBLE L EAD (0 . 37 ) 4.3 (0.17) DIA. C.S. 16mm 2 RED SILICON RUBBER 157 (6.18) 170 (6.69) RED CATHO DE WHITE GATE C.S. 0.4 mm (.0006 s.i.) 2 (.025 s.i.) Fast-on Terminals 10 (0.39) 215 (8.46) 55 (2.16) MIN. RED SHRINK WHITE SHRINK 24 (0.94) MAX. 10 (0.39) MAX. AMP. 280000-1 REF-250 22.5 (0.88) MAX. DIA. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A Case Style TO-209AC (TO-94) All dimensions in millimeters (inches) 29.5 (1.16) MAX. * FOR METRIC DEVICE: M12 X 1.75 CONTACT FACTORY Maximum Allowable Case Temperature (C) 130 120 110/111RKI Series 111RKI Series R thJC (DC) = 0.27 K/W Maximum Allowable Case Temperature (C) 140 140 130 120 20 110/111RKI Series 111RKI Series R thJC (DC) = 0.27 K/W ( 0. 79 ) MI N . MI 8.5 (0.33) DIA. 2.6 (0.10) MAX. N. Conduction Angle Conduction Period 110 100 90 80 70 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 110 100 90 30 80 0 20 40 60 80 100 120 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 30 60 90 120 180 DC 90 60 120 180 www.irf.com 5 110/111RKI Series Bulletin I25152 rev. E 09/03 Maximum Average On-state Power Loss (W) 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Conduction Angle 180 120 90 60 30 RMS Limit A hS Rt 0. 6 K/ = W 0.3 0. 8 W K/ K/ W -D 1K /W a elt R 1.5 K/W 2K /W 110/111RKI Series 111RKI Series T J = 140C 4 K/ W 5 K/W Fig. 3 - On-state Power Loss Characteristics Maximum Average On-state Power Loss (W) 220 200 180 160 140 120 100 RMS Limit 80 60 40 20 0 Conduction Period DC 180 120 90 60 30 0. 6 0 .8 1K 1.5 110/111RKI Series 111RKI Series T J = 140C K/ W 2 K/ W 4 K/W 5 K/ W R K/ W K/ W /W SA th = 3 0. W K/ -D ta el R 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 1800 1600 1400 1200 1000 800 1 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 140C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Peak Half Sine Wave On-state Current (A) 2000 2500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 140C 2000 No Voltage Reapplied Rated VRRMReapplied 1500 1000 110/111RKI Series 111RKI Series 10 100 110/111RKI Series 111RKI Series 500 0.01 0.1 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 6 www.irf.com 110/111RKI Series Bulletin I25152 rev. E 09/03 10000 Instantaneous On-state Current (A) TJ = 25C 1000 TJ = 140C 100 10 110/111RKI Series 111RKI Series 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics 1 Steady State Value R thJC = 0.27 K/W (DC Operation) 0.1 Transient Thermal Impedance Z thJC (K/W) 0.01 110/111RKI Series 111RKI Series 0.001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 30ohms; tr<=0.5 s, tp=>6s b) Recommended load line for 10 <=30% rated di/dt: 15V, 40ohms (a) tr<=1 s, tp=>6s (b) Tj=-40 C Tj=25 C (1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300s Tj=140 C 1 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: 110/111RKI Series Device: 111RKI Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.irf.com 7 110/111RKI Series Bulletin I25152 rev. E 09/03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03 /03 8 www.irf.com This datasheet has been download from: www..com Datasheets for electronics components. |
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